Polarisation-controlled single photon emission at high temperatures from InGaN quantum dots
نویسندگان
چکیده
منابع مشابه
Single photon emission from site-controlled InAs quantum dots grown on GaAs(001) patterned substrates.
We present a fabrication method to produce site-controlled and regularly spaced InAs/GaAs quantum dots for applications in quantum optical information devices. The high selectivity of our epitaxial regrowth procedure can be used to allocate the quantum dots only in positions predefined by ex-situ local oxidation atomic force nanolithography. The quantum dots obtained following this fabrication ...
متن کاملSingle-photon emission from single InGaAs/GaAs quantum dots grown by droplet epitaxy at high substrate temperature
The authors report single-photon emission from InGaAs quantum dots grown by droplet epitaxy on (100) GaAs substrates using a solid-source molecular beam epitaxy system at elevated substrate temperatures above 400°C without post-growth annealing. High-resolution micro-photoluminescence spectroscopy exhibits sharp excitonic emissions with lifetimes ranging from 0.7 to 1.1 ns. The coherence proper...
متن کاملPolarized emission lines from A- and B-type excitonic complexes in single InGaN/GaN quantum dots
Cathodoluminescence measurements on single InGaN/GaN quantum dots (QDs) are reported. Complex spectra with up to five emission lines per QD are observed. The lines are polarized along the orthogonal crystal directions [1120] and [1100]. Realistic eight-band k ·p electronic structure calculations show that the polarization of the lines can be explained by excitonic recombinations involving hole ...
متن کاملTelecommunication Wavelength-Band Single-Photon Emission from Single Large InAs Quantum Dots Nucleated on Low-Density Seed Quantum Dots
Single-photon emission in the telecommunication wavelength band is realized with self-assembled strain-coupled bilayer InAs quantum dots (QDs) embedded in a planar microcavity on GaAs substrate. Low-density large QDs in the upper layer active for ~1.3 μm emission are fabricated by precisely controlling the indium deposition amount and applying a gradient indium flux in both QD layers. Time-reso...
متن کاملSingle-photon and photon-pair emission from CdSe/Zn(S,Se) quantum dots
S. Strauf 1 , S. M. Ulrich 1 , K. Sebald 1 , P. Michler *,1 , T. Passow 2 , D. Hommel 2 , G. Bacher 3 , and A. Forchel 1 Institute for Solid State Physics, Semiconductor Optics, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany 2 Institute for Solid State Physics, Semiconductor Epitaxy, University of Bremen, P.O. Box 330440, 28334 Bremen, Germany 3 Technical Physics, University of Wü...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale
سال: 2017
ISSN: 2040-3364,2040-3372
DOI: 10.1039/c7nr03391e